One of the applications of high dose ion implantation is to form surface
alloys or compound layers. The detailed characterization of such composite
structures is of great importance. This paper tries to answer the question:
how can we outline, at least, a qualitative picture from the optical
properties measured by ellipsometry of high dose Al and Sb implanted
silicon. Attempts are done to separate the effect of implanted impurities
from the dominant disorder contribution to the measured optical properties.
As the ellipsometry does not provide information enough to decide the
applicability of optical models therefore methods sensitive to the structure
(channeling and TEM) were applied too.